An epitaxial wafer is a wafer of semiconducting component made by epitaxial growth for use in photonics, spintronics, photovoltaics, microelectronics. The epi layer may be the same material as the substrate, commonly monocrystalline silicon, or it may be a more alien material with circumstantial enviable trait. GaN epitaxial wafer delivers modernization at the gadget level to accost the preconditions of next generation 5G radiofrequency (RF) cellular networks, customer power supplies and exclusive sensor systems.
An epitaxial wafer also acknowledged as, epi wafer, is a wafer of semiconductive component manufactured by epitaxial growth (epitaxy) for operation in photonics, microelectronics, spintronics, or photovoltaic. The epitaxial layers subsist of discrete amalgamations such as gallium nitride (GaN), gallium arsenide (GaAs), or some sequence of the components gallium, nitrogen, indium, phosphorus, aluminum or arsenic. High electron movability, low changing losses, and lesser arrangement imbalances are some of the crucial conveniences of GaN Substrate, which are resulting in its maintenance in industries such as power electronics and optoelectronics.
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